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Dry passivation studies of GaAs(110) surfaces by gallium oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications

Dry passivation studies of GaAs(110) surfaces by gallium oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications2001

Danny Kim

Details

First published
2001
OL Work ID
OL12626808W

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