Dry passivation studies of GaAs(110) surfaces by gallium oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications
Dry passivation studies of GaAs(110) surfaces by gallium oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications2001
Details
- First published
- 2001
- OL Work ID
- OL12626808W