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Charakterisierung von epitaktisch auf InP abgeschiedenen GaxIn₁-xAs-Schichten (0.45<x<0.49) mittels Photolumineszenz und Doppelkristall - Röntgendiffraktometrie

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Charakterisierung von epitaktisch auf InP abgeschiedenen GaxIn₁-xAs-Schichten (0.45<x<0.49) mittels Photolumineszenz und Doppelkristall - Röntgendiffraktometrie

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