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Electronic characterization of defects in narrow gap semiconductors

Electronic characterization of defects in narrow gap semiconductors

James D. Patterson

Details

OL Work ID
OL6592570W

Subjects

Crystal defectsElectron energyEnergy levelsEnergy of formationImpuritiesInterstitialsMercury cadmium telluridesMercury telluridesSemiconductors (Materials)Vacancies (Crystal defects)Zinc selenidesZinc tellurides

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