Lex

Browse

GenresShelvesPremiumBlog

Company

AboutJobsPartnersSell on LexAffiliates

Resources

DocsInvite FriendsFAQ

Legal

Terms of ServicePrivacy Policygeneral@lex-books.com(215) 703-8277

© 2026 LexBooks, Inc. All rights reserved.

The Source/Drain Engineering of Nanoscale Germanium-based MOS DevicesThe Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Zhiqiang Li

Details

OL Work ID
OL20860939W

Subjects

Metal oxide semiconductorsGermaniumElectronics

Find this book

Open Library
Book data from Open Library. Cover images courtesy of Open Library.